| 元件型号: | 2SK2719 |
| 产品名称: | 2SK2719 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | 2SK2719 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Toshiba Semiconductor and Storage |
| 描述: | MOSFET N-CH 900V 3A TO-3PN |
| 系列: | - |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 900V |
| 电流 - 连续漏极 (Id) @ 25°C: | 3A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 4V @ 1mA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 25nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 750pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 125W (Tc) |
| Rds On（最大）@Id、Vgs: | 4.3 Ohm @ 1.5A, 10V |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P(N) |
| 包装/箱: | TO-3P-3, SC-65-3 |
元件型号
品牌
生产日期
数量
2SK2719 ROHM 23+
ROHM
23+
32787
USD 0
2SK2719 TOSHIBA 09+
TOSHIBA
09+
444
USD 0
2SK2719 TOSHIBA/ 2022
TOSHIBA/
2022
11444
USD 0
2SK2719 TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
2SK2719 ROHM 23+
ROHM
23+
32787
USD 0
2SK2719 TOSHIBA 09+
TOSHIBA
09+
444
USD 0
2SK2719 TOSHIBA/ 2022
TOSHIBA/
2022
11444
USD 0
2SK2719 TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
| 
