| 元件型号: | FQB55N10TM |
| 产品名称: | FQB55N10TM Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | FQB55N10TM |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Fairchild/ON Semiconductor |
| 描述: | MOSFET N-CH 100V 55A D2PAK |
| 系列: | QFET |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 100V |
| 电流 - 连续漏极 (Id) @ 25°C: | 55A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 10V |
| Vgs(th)（最大值）@Id: | 4V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 98nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 2730pF @ 25V |
| Vgs（最大）: | ±25V |
| 场效应管特性: | - |
| 功耗（最大）: | 3.75W (Ta), 155W (Tc) |
| Rds On（最大）@Id、Vgs: | 26 mOhm @ 27.5A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包装/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
元件型号
品牌
生产日期
数量
单价 (USD)
数量
FQB55N10TM NS 10+ 0
NS
10+
25000
USD 0
FQB55N10TM ON 0
ON
320
USD 0
FQB55N10TM onsemi 22+ 0
onsemi
22+
3200
USD 0
FQB55N10TM ONSEMI 23+ 0
ONSEMI
23+
1600
USD 0
元件型号
品牌
生产日期
数量
FQB55N10TM ONSEMI 2237+
ONSEMI
2237+
3200
USD 0
FQB55N10TM ONSEMI 2237+
ONSEMI
2237+
3200
USD 0
| 
