| 元件型号: | GP2M004A065PG |
| 产品名称: | GP2M004A065PG Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | GP2M004A065PG |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Global Power Technologies Group |
| 描述: | MOSFET N-CH 650V 4A IPAK |
| 系列: | - |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 650V |
| 电流 - 连续漏极 (Id) @ 25°C: | 4A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 5V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 15nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 642pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 98.4W (Tc) |
| Rds On（最大）@Id、Vgs: | 2.4 Ohm @ 2A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-Pak |
| 包装/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
元件型号
品牌
生产日期
数量
单价 (USD)
数量
GP2S+ Mini-Circuits 22+ 0
Mini-Circuits
22+
5000
USD 0
元件型号
品牌
生产日期
数量
GP2M004A065PG SemiQ 2023+
SemiQ
2023+
8000
USD 0
GP2M004A065PG SemiQ 2023+
SemiQ
2023+
8000
USD 0
GP2M004A065PG Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0
GP2M004A065PG Global Power Technologies Group
Global Power Technologies Group
0
USD 0
GP2M004A065PG SemiQ 2023+
SemiQ
2023+
8000
USD 0
GP2M004A065PG SemiQ 2023+
SemiQ
2023+
8000
USD 0
GP2M004A065PG Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0
GP2M004A065PG Global Power Technologies Group
Global Power Technologies Group
0
USD 0
| 
