| 元件型号: | IPA126N10N3GXKSA1 |
| 产品名称: | IPA126N10N3GXKSA1 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IPA126N10N3GXKSA1 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 100V 35A TO220-FP |
| 系列: | OptiMOS |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 100V |
| 电流 - 连续漏极 (Id) @ 25°C: | 35A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 3.5V @ 45µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 35nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 2500pF @ 50V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 33W (Tc) |
| Rds On（最大）@Id、Vgs: | 12.6 mOhm @ 35A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-FP |
| 包装/箱: | TO-220-3 Full Pack |
元件型号
品牌
生产日期
数量
IPA126N10N3GXKSA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
500
USD 0
IPA126N10N3GXKSA1
1669
USD 0
IPA126N10N3GXKSA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPA126N10N3GXKSA1 Infineon Technologies 23+
Infineon Technologies
23+
5000
USD 0
IPA126N10N3GXKSA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
500
USD 0
IPA126N10N3GXKSA1
1669
USD 0
IPA126N10N3GXKSA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPA126N10N3GXKSA1 Infineon Technologies 23+
Infineon Technologies
23+
5000
USD 0
| 
