| 元件型号: | IPB083N10N3 |
| 产品名称: | IPB083N10N3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IPB083N10N3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 100V 80A TO263-3 |
| 系列: | OptiMOS |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 100V |
| 电流 - 连续漏极 (Id) @ 25°C: | 80A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 6V, 10V |
| Vgs(th)（最大值）@Id: | 3.5V @ 75µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 55nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 3980pF @ 50V |
| Vgs（最大）: | ±20V |
| 场效应管特性: | - |
| 功耗（最大）: | 125W (Tc) |
| Rds On（最大）@Id、Vgs: | 8.3 mOhm @ 73A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-2 |
| 包装/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
元件型号
品牌
生产日期
数量
IPB083N10N3 Infineon 21+
Infineon
21+
30000
USD 0
IPB083N10N3 Infineon 22+
Infineon
22+
3031
USD 0
IPB083N10N3 G INFINEON/ 2022
INFINEON/
2022
43750
USD 0
IPB083N10N3 Infineon 21+
Infineon
21+
30000
USD 0
IPB083N10N3 Infineon 22+
Infineon
22+
3031
USD 0
IPB083N10N3 G INFINEON/ 2022
INFINEON/
2022
43750
USD 0
| 
