| 元件型号: | IRF7807VD1PBF |
| 产品名称: | IRF7807VD1PBF Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IRF7807VD1PBF |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 30V 8.3A 8-SOIC |
| 系列: | FETKY |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 8.3A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 3V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 14nC @ 4.5V |
| 输入电容 (Ciss)（最大值）@Vds: | - |
| Vgs（最大）: | - |
| 场效应管特性: | Schottky Diode (Isolated) |
| 功耗（最大）: | 2.5W (Ta) |
| Rds On（最大）@Id、Vgs: | 25 mOhm @ 7A, 4.5V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包装/箱: | 8-SOIC (0.154", 3.90mm Width) |
元件型号
品牌
生产日期
数量
IRF7807VD1PBF IR 2022
IR
2022
13036
USD 0
IRF7807VD1PBF IR 22+
IR
22+
13786
USD 0
IRF7807VD1PBF IOR
IOR
30397
USD 0
IRF7807VD1PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IRF7807VD1PBF IR 2022
IR
2022
13036
USD 0
IRF7807VD1PBF IR 22+
IR
22+
13786
USD 0
IRF7807VD1PBF IOR
IOR
30397
USD 0
IRF7807VD1PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
| 
