| 元件型号: | IRFH5215TR2PBF |
| 产品名称: | IRFH5215TR2PBF Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IRFH5215TR2PBF |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 150V 5.0A PQFN |
| 系列: | HEXFET |
| 包装: | |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 150V |
| 电流 - 连续漏极 (Id) @ 25°C: | 5A (Ta), 27A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 5V @ 100µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 32nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 1350pF @ 50V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 3.6W (Ta), 104W (Tc) |
| Rds On（最大）@Id、Vgs: | 58 mOhm @ 16A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) |
| 包装/箱: | 8-VQFN Exposed Pad |
元件型号
品牌
生产日期
数量
IRFH5215TR2PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IRFH5215TR2PBF ir 23+
ir
23+
100000
USD 0
IRFH5215TR2PBF 24+
24+
5000
USD 0
IRFH5215TR2PBF IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
400
USD 0
IRFH5215TR2PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IRFH5215TR2PBF ir 23+
ir
23+
100000
USD 0
IRFH5215TR2PBF 24+
24+
5000
USD 0
IRFH5215TR2PBF IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
400
USD 0
| 
