| 元件型号: | IRLHM620TR2PBF |
| 产品名称: | IRLHM620TR2PBF Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IRLHM620TR2PBF |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 20V 26A PQFN |
| 系列: | HEXFET |
| 包装: | |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 20V |
| 电流 - 连续漏极 (Id) @ 25°C: | 26A (Ta), 40A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 1.1V @ 50µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 78nC @ 4.5V |
| 输入电容 (Ciss)（最大值）@Vds: | 3620pF @ 10V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 2.7W (Ta), 37W (Tc) |
| Rds On（最大）@Id、Vgs: | 2.5 mOhm @ 20A, 4.5V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (3x3) |
| 包装/箱: | 8-VQFN Exposed Pad |
元件型号
品牌
生产日期
数量
IRLHM620TR2PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IRLHM620TR2PBF IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
400
USD 0
IRLHM620TR2PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IRLHM620TR2PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IRLHM620TR2PBF IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
400
USD 0
IRLHM620TR2PBF INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
| 
