| 元件型号: | NVD3055L170T4GVF01 |
| 产品名称: | NVD3055L170T4GVF01 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | NVD3055L170T4GVF01 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | ON Semiconductor |
| 描述: | MOSFET N-CH 60V 9A DPAK |
| 系列: | - |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 60V |
| 电流 - 连续漏极 (Id) @ 25°C: | 9A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 5V |
| Vgs(th)（最大值）@Id: | 2V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 10nC @ 5V |
| 输入电容 (Ciss)（最大值）@Vds: | 275pF @ 25V |
| Vgs（最大）: | ±15V |
| 场效应管特性: | - |
| 功耗（最大）: | 1.5W (Ta) |
| Rds On（最大）@Id、Vgs: | 170 mOhm @ 4.5A, 5V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包装/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
元件型号
品牌
生产日期
数量
NVD3055L170T4G-VF01
ON Semiconductor
ON Semiconductor
812
USD 0
NVD3055L170T4G-VF01 BRANDNEW 22+
BRANDNEW
22+
5415
USD 0
NVD3055L170T4G-VF01 ON 23+
ON
23+
360000
USD 0
NVD3055L170T4G-VF01 ON 23+
ON
23+
360000
USD 0
NVD3055L170T4G-VF01 ONSEMI 22+
ONSEMI
22+
1252
USD 0
NVD3055L170T4G-VF01
ON Semiconductor
ON Semiconductor
812
USD 0
NVD3055L170T4G-VF01 BRANDNEW 22+
BRANDNEW
22+
5415
USD 0
NVD3055L170T4G-VF01 ON 23+
ON
23+
360000
USD 0
NVD3055L170T4G-VF01 ON 23+
ON
23+
360000
USD 0
NVD3055L170T4G-VF01 ONSEMI 22+
ONSEMI
22+
1252
USD 0
| 
