| 元件型号: | RN1968 |
| 产品名称: | RN1968 Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| 商户特定标识符: | RN1968 |
| 类别: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| 品牌: | Toshiba Semiconductor and Storage |
| 描述: | TRANS 2NPN PREBIAS 0.2W US6 |
| 系列: | - |
| 包装: | Tape & Reel (TR) |
| 晶体管类型: | 2 NPN - Pre-Biased (Dual) |
| 集电极电流 (Ic)（最大）: | 100mA |
| 电压 - 集电极发射极击穿（最大）: | 50V |
| 电阻器 - 基极 (R1)（欧姆）: | 22k |
| 电阻器 - 发射极基极 (R2)（欧姆）: | 47k |
| 直流电流增益 (hFE)（最小值）@ Ic、Vce: | 80 @ 10mA, 5V |
| Vce 饱和度（最大值）@Ib、Ic: | 300mV @ 250µA, 5mA |
| 电流 - 集电极截止（最大）: | 100nA (ICBO) |
| 频率-转变: | 250MHz |
| 功率 - 最大: | 200mW |
| 安装类型: | Surface Mount |
| 包装/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | US6 |
元件型号
品牌
生产日期
数量
RN1968(TE85L,F) 6-WFDFN Exposed Pad
6-WFDFN Exposed Pad
482
USD 0
RN1968 TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1968(TE85L,F) TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1968(TE85L,F) TOSHIBA 22+
TOSHIBA
22+
5278
USD 0
RN1968(TE85L,F) Toshiba Semiconductor and Storage 2023+
Toshiba Semiconductor and Storage
2023+
58338
USD 0
RN1968(TE85L,F) 6-WFDFN Exposed Pad
6-WFDFN Exposed Pad
482
USD 0
RN1968 TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1968(TE85L,F) TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1968(TE85L,F) TOSHIBA 22+
TOSHIBA
22+
5278
USD 0
RN1968(TE85L,F) Toshiba Semiconductor and Storage 2023+
Toshiba Semiconductor and Storage
2023+
58338
USD 0
| 
