| 元件型号: | RN2109ACT |
| 产品名称: | RN2109ACT Transistors - Bipolar (BJT) - Single, Pre-Biased |
| 商户特定标识符: | RN2109ACT |
| 类别: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| 品牌: | Toshiba Semiconductor and Storage |
| 描述: | TRANS PREBIAS PNP 0.1W CST3 |
| 系列: | - |
| 包装: | Cut Tape (CT) |
| 晶体管类型: | PNP - Pre-Biased |
| 集电极电流 (Ic)（最大）: | 80mA |
| 电压 - 集电极发射极击穿（最大）: | 50V |
| 电阻器 - 基极 (R1)（欧姆）: | 47k |
| 电阻器 - 发射极基极 (R2)（欧姆）: | 22k |
| 直流电流增益 (hFE)（最小值）@ Ic、Vce: | 70 @ 10mA, 5V |
| Vce 饱和度（最大值）@Ib、Ic: | 150mV @ 250µA, 5mA |
| 电流 - 集电极截止（最大）: | 500nA |
| 频率-转变: | - |
| 功率 - 最大: | 100mW |
| 安装类型: | Surface Mount |
| 包装/箱: | SC-101, SOT-883 |
| 供应商设备包: | CST3 |
元件型号
品牌
生产日期
数量
RN2109ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN2109ACT(TPL3) Toshiba 21+
Toshiba
21+
8000
USD 0
RN2109ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN2109ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
0
USD 0
RN2109ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
0
USD 0
RN2109ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN2109ACT(TPL3) Toshiba 21+
Toshiba
21+
8000
USD 0
RN2109ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN2109ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
0
USD 0
RN2109ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
0
USD 0
| 
