元件型号: | SI6562DQT1GE3 |
产品名称: | SI6562DQT1GE3 Transistors - FETs, MOSFETs - Arrays |
商户特定标识符: | SI6562DQT1GE3 |
类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
品牌: | Vishay Siliconix |
描述: | MOSFET N/P-CH 20V 8-TSSOP |
系列: | TrenchFET |
包装: | |
场效应管类型: | N and P-Channel |
场效应管特性: | Logic Level Gate |
漏源电压 (Vdss): | 20V |
电流 - 连续漏极 (Id) @ 25°C: | - |
Rds On(最大)@Id、Vgs: | 30 mOhm @ 4.5A, 4.5V |
Vgs(th)(最大值)@Id: | 600mV @ 250µA (Min) |
栅极电荷 (Qg)(最大值)@Vgs: | 25nC @ 4.5V |
输入电容 (Ciss)(最大值)@Vds: | - |
功率 - 最大: | 1W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包装/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
元件型号
品牌
生产日期
数量
SI6562DQ-T1-GE3 VBSEMI/
VBSEMI/
21065
USD 0
SI6562DQ-T1-GE3 VISHAY 20+
VISHAY
20+
2000
USD 0
SI6562DQ-T1-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SI6562DQ-T1-GE3 ALTERA 0737+
ALTERA
0737+
6234
USD 0
SI6562DQ-T1-GE3 TOSHIBA 2002
TOSHIBA
2002
2000
USD 0
SI6562DQ-T1-GE3 VBSEMI/
VBSEMI/
21065
USD 0
SI6562DQ-T1-GE3 VISHAY 20+
VISHAY
20+
2000
USD 0
SI6562DQ-T1-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SI6562DQ-T1-GE3 ALTERA 0737+
ALTERA
0737+
6234
USD 0
SI6562DQ-T1-GE3 TOSHIBA 2002
TOSHIBA
2002
2000
USD 0