| 元件型号: | SUP85N033M6PGE3 |
| 产品名称: | SUP85N033M6PGE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SUP85N033M6PGE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET N-CH 30V 85A TO220AB |
| 系列: | TrenchFET |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 85A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 4.5V, 10V |
| Vgs(th)（最大值）@Id: | 2.5V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 100nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 3535pF @ 15V |
| Vgs（最大）: | ±20V |
| 场效应管特性: | - |
| 功耗（最大）: | 3.1W (Ta), 78.1W (Tc) |
| Rds On（最大）@Id、Vgs: | 3.6 mOhm @ 22A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包装/箱: | TO-220-3 |
元件型号
品牌
生产日期
数量
SUP85N03-3M6P-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SUP85N03-3M6P-GE3 22+
22+
7800
USD 0
SUP85N03-3M6P-GE3 ORIGINAL 22+
ORIGINAL
22+
5000
USD 0
SUP85N03-3M6P-GE3 VISHAY
VISHAY
34880
USD 0
SUP85N03-3M6P-GE3 VISHAY
VISHAY
34880
USD 0
SUP85N03-3M6P-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SUP85N03-3M6P-GE3 22+
22+
7800
USD 0
SUP85N03-3M6P-GE3 ORIGINAL 22+
ORIGINAL
22+
5000
USD 0
SUP85N03-3M6P-GE3 VISHAY
VISHAY
34880
USD 0
SUP85N03-3M6P-GE3 VISHAY
VISHAY
34880
USD 0
| 
